README.md

ViennaPS Examples

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Building

Run the following commands from the repository root to build the C++ examples:

cmake -B build -DVIENNAPS_BUILD_EXAMPLES=ON
cmake --build build

The examples can then be executed in their respective build folders with the config files, e.g.:

cd build/examples/exampleName
./exampleName.bat config.txt # (Windows)
./exampleName config.txt # (Other)

Individual examples can also be built by calling make in their respective build folder. Many examples also include Python scripts using the ViennaPS bindings.

Trench Deposition

This example simulates particle deposition in a trench. It defaults to 3D; set D = 2 in trenchDeposition.cpp for 2D. Adjust process and geometry parameters in config.txt. The image compares different particle sticking probabilities s.

SF6/O2 Hole Etching

This example simulates SF₆/O₂ plasma etching with ion bombardment. Geometry and plasma conditions are configured in config.txt. The image compares hole profiles for different ion and neutral fluxes, as tested in testFluxes.py.

Note

The underlying model may change in future releases, so running this example in newer versions of ViennaPS might not always reproduce exactly the same results.
The images shown here were generated using ViennaPS v3.6.0.

Bosch Process

This example compares three approaches to simulating the Bosch deep reactive ion etching (DRIE) process. From left to right, the image shows process emulation, a simple simulation model, and a more detailed physical model.

Wet Etching

This example demonstrates the wet etching process, specifically focusing on the cantilever structure. The simulation captures the etching dynamics and the influence of crystallographic directions on the etch profile.

Selective Epitaxy

This example demonstrates the selective epitaxy process, focusing on the growth of SiGe on a Si substrate. Similar to wet etching, the process is influenced by crystallographic directions, which can be adjusted in the config.txt file. The simulation captures the growth dynamics and the resulting SiGe structure.

Redeposition During Selective Etching

This example models byproduct transport and redeposition during selective etching of a Si₃N₄/SiO₂ stack. A convection-diffusion equation tracks byproducts in the etching solution, and their accumulation determines surface regrowth.

GDS Mask Import Example

This example tests the full GDS mask import, blurring, rotation, scaling, and flipping as well as the level set conversion pipeline. Shown below is the result after applying proximity correction and extrusion on a simple test.

Fin Oxidation

This example simulates thermal oxidation of a silicon fin, capturing non-uniform oxide growth and corner rounding due to crystallographic anisotropy. The image shows the initial fin on the left and the oxidized structure with its pressure field on the right.

LOCOS Oxidation

This example simulates Local Oxidation of Silicon (LOCOS), including the characteristic bird's beak beneath the nitride mask. The model couples oxidant diffusion, viscous oxide flow, and mask bending. The image shows the oxidized material stack on the left and nitride stress and oxide pressure on the right.